Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

نویسندگان

چکیده

Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate low absorbance of extreme ultraviolet (EUV) radiation by thin films organic that lead poor sensitivity and their inability handle rigors development etching conditions. Aim: The long rich history using metal-containing in electron beam lithography can offer interesting lessons, pointers, insights relatively newcomer EUV lithography, which is slightly over a decade old. Approach: Electron has been enjoying considerable amount freedom choice resist materials for close 50 years; especially use attain not only single digit nanometer resolution, higher sensitivity, etch resistance but also lower line-edge roughness. Here, we make comprehensive historical review progress made patterning derive be potentially useful patterning. Perspectives: Small molecular weight are proven crucial achieving resolution with Simplifying reducing etch-stack-layers conceivable resists, along direct-patterning functional heterogeneous integration. Efficient contact hole at tighter pitches may incumbent on positive-tone research.

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ژورنال

عنوان ژورنال: Journal of micro/nanopatterning, materials, and metrology

سال: 2022

ISSN: ['2708-8340']

DOI: https://doi.org/10.1117/1.jmm.21.4.041402