Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning
نویسندگان
چکیده
Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate low absorbance of extreme ultraviolet (EUV) radiation by thin films organic that lead poor sensitivity and their inability handle rigors development etching conditions. Aim: The long rich history using metal-containing in electron beam lithography can offer interesting lessons, pointers, insights relatively newcomer EUV lithography, which is slightly over a decade old. Approach: Electron has been enjoying considerable amount freedom choice resist materials for close 50 years; especially use attain not only single digit nanometer resolution, higher sensitivity, etch resistance but also lower line-edge roughness. Here, we make comprehensive historical review progress made patterning derive be potentially useful patterning. Perspectives: Small molecular weight are proven crucial achieving resolution with Simplifying reducing etch-stack-layers conceivable resists, along direct-patterning functional heterogeneous integration. Efficient contact hole at tighter pitches may incumbent on positive-tone research.
منابع مشابه
Helium Ion Beam Lithography on Fullerene Molecular Resists for Sub-10 nm Patterning
Xiaoqing Shi , Philip Prewett , Ejaz Huq , Darren M Bagnall , Alex P G Robinson, Stuart A Boden , a Electronics and Computer Science, University of Southampton, Southampton, SO16 1BJ, UK b Oxford Scientific Consultants Ltd., 67 High Street, Dorchester, Oxfordshire, OX10 7HN, UK c Faculty of Engineering, The University of New South Wales 3, Sydney, NSW 2052, Australia d School of Chemical Engine...
متن کاملElectron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has be...
متن کاملDevelopment of Inorganic Resists for Electron Beam Lithography: Novel Materials and Simulations
متن کامل
9. Nanoimprint Lithography – Patterning of Resists Using Molding
Nanoimprint lithography (NIL) is an emerging high-resolution parallel patterning method, mainly aimed towards fields in which electronbeam and high-end photolithography are costly and do not provide sufficient resolution at reasonable throughput. In a top-down approach, a surface pattern of a stamp is replicated into a material by mechanical contact and threedimensional material displacement. T...
متن کاملElectron Beam Lithography of Fresnel Zone Plates Using A Rectilinear Machine And Trilayer Resists
We describe the use of a commercial e-beam lithography system (JEOL JBX-6000FS) to fabricate Fresnel zone plates for x-ray microscopy. The machine is capable of controlling the pitch of optical gratings with sub-nanometer precision, so its beam placement properties are more than adequate for zone plate fabrication. The zone plate pattern is written into a thin top layer (PMMA or Calixarene) of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of micro/nanopatterning, materials, and metrology
سال: 2022
ISSN: ['2708-8340']
DOI: https://doi.org/10.1117/1.jmm.21.4.041402